- PID
- 3695887
Atomic Layer Deposition System
Request For Quotation
•System Specification
- Substrate Size：4 ~ 12” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Chamber Material: Al6061 with Anodized
- Gap Adjustable between Showerhead and Substrate
- Gas Delivery system: Bubbler, LDS etc.
- Max Temperature: 500℃ (@ Wafer)
- No. of Precursor Canisters：Up to 4 Sets (Standard)
- Pressure Control: Automatic Control by Throttle Valve
- Process Gauge: CDG Gauge (10 Torr)
- Process Pump: Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
- Substrate Size：4 ~ 12” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Chamber Material: Al6061 with Anodized
- Gap Adjustable between Showerhead and Substrate
- Gas Delivery system: Bubbler, LDS etc.
- Max Temperature: 500℃ (@ Wafer)
- No. of Precursor Canisters：Up to 4 Sets (Standard)
- Pressure Control: Automatic Control by Throttle Valve
- Process Gauge: CDG Gauge (10 Torr)
- Process Pump: Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
- Award
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- Shipping
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- Type of Freight Proceed after consultation
- Modes of Transport Proceed after consultation
- Payment
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- Quantity
- MOQ : 1 Units
Detailed Description
[Atomic Premium]
Both thermal and PEALD processes are possible with our flagship product, Showerhead type ALD equipment.
Designed with a unique showerhead structure, it can have excellent uniformity and durability of the thin film, and when using PEALD, the showerhead Parasites that occur inside
Technology to prevent plasma is held as a patent.
The size of the substrate is 4 to 12 inches (Wafer) and the Showerhead The gap between the and the board can be adjusted.
The maximum temperature is 500℃ (Wafer).
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