PID
3652168

Sic Single Crystal PVT Growth Furnace

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Silicon Carbide single crystal PVT growth furnace
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  • Lead Time90 ~ 150days
  • Type of Freight MT
  • Modes of Transport EXW,FCA,FOB
  • Products Shipped From Busan
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Quantity
MOQ : 1 ea

Detailed Description

SiC Single Crystal PVT Growth Furnace

SiC single crystal PVT growth furnace of STi is a growth equipmentby using PVT (Physical Vapor Transport) method,

which is a vapor phase transfer growth method and uses an induction heating method in the intermediate frequency range.

This equipment can grow 6 to 8-inch (150-200mm) ingots. 

STi has now completed development of 8-inch growth equipment.

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