Atomic-Premium

Showerhead type Plasma-Enhanced ALD (PE-ALD)

• Plasma process & treatment
• Adjustable the gap between showerhead and substrate
• Variable gas delivery system : Bubbler, Vaporizer, LDS
• Completely separated source delivery
• Configuration ALD/CVD mode process
• Good film uniformity & quality
• Process temperature : up to 500°C
• Precursor canister : 4EA(standard)
• Substrate Size : 4 ~ 12” wafer
• Applications
  Dielectric thin films : Al2O3, HfO2, ZrO2, TiO2, ZnO2, ZnS, GST, Laminate films, etc.
  Nitride films : AlN, TiN, TiAlN, TaN, etc.
  Metal films : Ru, Co, Ti, Ni, etc.

Atomic-Classic

Traveling wave type ALD

• Traveling wave type thermal ALD
• Laminar gas flow (Side gas flow)
• Variable gas delivery system : Bubbler, LDS
• Low particle generation
• Very small volume for process
• Available laminated & mixed process
• Process temperature : up to 450°C
• Precursor canister : 4EA(standard)
• Substrate size :
  4 ~ 8” wafer
  2G : 370x470mm glass
• Applications
  Dielectric thin films : Al2O3, HfO2, ZrO2, TiO2, ZnO2, STO, ZnS, Laminate films, etc.

Atomic-Shell

Rotating reactor ALD for shell coating on core structure

• Nano size powder coating system
• Reactor volume : > 100cc
• Filter size : Variable(from 0.5µm~)
• Horizontal rotation system
• Precursor canister : 4EA
• Process temperature : R.T. ~ 350°C (Reactor body : 230°C)
• Reactor rotation : DC Motor
• Rotation speed : 10 ~ 120rpm
• Base pressure : under 20mTorr
• Application : Coating on particle, wire, tube, etc.

Canister for ALD/CVD

• SUS316L with EP treatment
• Volume : 1~200L
• Maximum safety and cost efficient
• Hydraulic pressure : 300kPa
• Precursor canister : 4EA
• Leak rate：～2.0*10-9 mbar·l/sec