PID
3002497

Thermal CVD System with Uniform Heating Zone

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Synthesis of Carbon nanotubes, Graphene, and 2-Dim materials
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Quantity
MOQ : 1 Sets

Detailed Description

CNTs growth for field emission display device


Special Features

Small thermal CVD system for carbon nanotube synthesis.
Economical R&D system for CNTs synthesis,
Uniform heating zone,

Specifications

Heating range: 500 ~ 950°C
Average throughput: Up to 15,000 wafers per year
Wafer capacity : 3 × 2"
Dimension: 1,500L × 1,450H × 700W (mm3)
Power: 220V/380V, 3phase, 19kW
Gas: NH3/C2H2(C2H4, CH4, CO)/Ar
Furnace heater: nichrome(heating rate: 30°C/min, max. temp.: 950°C, deviation: ±5°C)
Pump: Rotary(600l/min)

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