- PID
- 3002497
Thermal CVD System with Uniform Heating Zone
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Synthesis of Carbon nanotubes, Graphene, and 2-Dim materials
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- Modes of Transport CIF,FOB
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- Quantity
- MOQ : 1 Sets
Detailed Description
CNTs growth for field emission display device
Special Features
Small thermal CVD system for carbon nanotube synthesis.
Economical R&D system for CNTs synthesis,
Uniform heating zone,
Specifications
Heating range: 500 ~ 950°C
Average throughput: Up to 15,000 wafers per year
Wafer capacity : 3 × 2"
Dimension: 1,500L × 1,450H × 700W (mm3)
Power: 220V/380V, 3phase, 19kW
Gas: NH3/C2H2(C2H4, CH4, CO)/Ar
Furnace heater: nichrome(heating rate: 30°C/min, max. temp.: 950°C, deviation: ±5°C)
Pump: Rotary(600l/min)
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